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Charge-carrier trapping in polyfluorene-type conjugated polymers

The trap spectrum of a fluorene-based conjugated polymer poly[9,9-bis(2-ethylhexyl)fluorene-2,7-diyl] (PF2∕6) and poly[9,9-bis(2-ethylhexyl)fluorene-2,7-diyl] end capped with hole-transporting moieties N , N -bis(4-methylphenyl)- N -phenylamine (PF2∕6am10) is investigated by means of thermally stimu...

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Published in:Journal of applied physics 2005-07, Vol.98 (2), p.024101-024101-8
Main Authors: Kadashchuk, A., Schmechel, R., von Seggern, H., Scherf, U., Vakhnin, A.
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cited_by cdi_FETCH-LOGICAL-c284t-64da18972bab9a15886238152dc7193dfc3909fb10a07a4f35e79f81f5d6a353
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creator Kadashchuk, A.
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description The trap spectrum of a fluorene-based conjugated polymer poly[9,9-bis(2-ethylhexyl)fluorene-2,7-diyl] (PF2∕6) and poly[9,9-bis(2-ethylhexyl)fluorene-2,7-diyl] end capped with hole-transporting moieties N , N -bis(4-methylphenyl)- N -phenylamine (PF2∕6am10) is investigated by means of thermally stimulated current (TSC) and thermally stimulated luminescence (TSL) techniques. A high-temperature TSC peak observed at 240 K in PF2∕6 is strongly affected by photooxidation and could be identified as electron trap with a depth of about 0.6 eV . It is ascribed to on-chain keto defects in the polymer. In contrast, end capping of PF2∕6 led to the appearance of a moderately deep trap for holes ( E a = 0.24 eV ) responsible for a TSC peak at 120 K . On the other hand, TSC data of this polymer reveal no keto-related traps for electrons implying much higher stability of PF2∕6am10 against oxidation. Besides the deep electron trap in PF2∕6, a very low-temperature TSC peak at about 60 K appears in PF2∕6 samples and correlates perfectly with thermally stimulated luminescence data. It is ascribed to shallow hole trapping most probably related to the tail states of the intrinsic density-of-state distribution. In general, it was found that the TSC in PF2∕6 samples is detectable only when a sufficiently high load voltage is applied during optical trap filling. The TSC spectra exhibit a striking difference with the polarity of load voltage for conjugated polymers, implying an important role of electrodes on the charge-carrier photogeneration in these polymers.
doi_str_mv 10.1063/1.1953870
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A high-temperature TSC peak observed at 240 K in PF2∕6 is strongly affected by photooxidation and could be identified as electron trap with a depth of about 0.6 eV . It is ascribed to on-chain keto defects in the polymer. In contrast, end capping of PF2∕6 led to the appearance of a moderately deep trap for holes ( E a = 0.24 eV ) responsible for a TSC peak at 120 K . On the other hand, TSC data of this polymer reveal no keto-related traps for electrons implying much higher stability of PF2∕6am10 against oxidation. Besides the deep electron trap in PF2∕6, a very low-temperature TSC peak at about 60 K appears in PF2∕6 samples and correlates perfectly with thermally stimulated luminescence data. It is ascribed to shallow hole trapping most probably related to the tail states of the intrinsic density-of-state distribution. In general, it was found that the TSC in PF2∕6 samples is detectable only when a sufficiently high load voltage is applied during optical trap filling. 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title Charge-carrier trapping in polyfluorene-type conjugated polymers
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