Influence of Mg content on the band alignment at CdS∕(Zn,Mg)O interfaces

In this investigation, we studied electronic properties of the CdS∕Zn1−xMgxO (x=0,0.15) interface using photoelectron spectroscopy. ZnO and (Zn,Mg)O films were deposited by magnetron sputtering from ceramic targets on thermally evaporated CdS. Valence-band offsets of ΔEV=1.2±0.1eV are determined for...

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Bibliographic Details
Published in:Applied physics letters 2005-07, Vol.87 (3)
Main Authors: Rao, G. Venkata, Säuberlich, F., Klein, A.
Format: Article
Language:English
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Summary:In this investigation, we studied electronic properties of the CdS∕Zn1−xMgxO (x=0,0.15) interface using photoelectron spectroscopy. ZnO and (Zn,Mg)O films were deposited by magnetron sputtering from ceramic targets on thermally evaporated CdS. Valence-band offsets of ΔEV=1.2±0.1eV are determined for both interfaces. The gap difference of 0.3eV between ZnO and Zn0.85Mg0.15O is therefore fully accommodated by a different conduction-band energy, which should be well suited for modulation doping in ZnO∕(Zn,Mg)O heterostructures.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1995951