Control of threshold voltage of organic field-effect transistors with double-gate structures

We fabricated pentacene field-effect transistors with planar-type double-gate structures, where the top- and bottom-gate electrodes can independently apply voltage biases to channel layers. The threshold voltage of organic transistors is changed systematically in a wide range from − 16 to − 43 V whe...

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Bibliographic Details
Published in:Applied physics letters 2005-07, Vol.87 (2), p.023509-023509-3
Main Authors: Iba, Shingo, Sekitani, Tsuyoshi, Kato, Yusaku, Someya, Takao, Kawaguchi, Hiroshi, Takamiya, Makoto, Sakurai, Takayasu, Takagi, Shinichi
Format: Article
Language:English
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Summary:We fabricated pentacene field-effect transistors with planar-type double-gate structures, where the top- and bottom-gate electrodes can independently apply voltage biases to channel layers. The threshold voltage of organic transistors is changed systematically in a wide range from − 16 to − 43 V when the voltage bias of the top-gate electrode is changed from 0 to + 60 V . The mobility in the linear regime is almost constant ( 0.2 cm 2 ∕ V s ) at various voltage biases of the top-gate electrode and the on/off ratio is 10 6 .
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1995958