Surface plasmon enhanced spontaneous emission rate of InGaN ∕ GaN quantum wells probed by time-resolved photoluminescence spectroscopy

We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well (QW) at 440 nm by employing surface plasmons (SPs) probed by time-resolved photoluminescence spectroscopy. We explore this remarkable enhancement of the emission rates and intensities resulting from the efficie...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2005-08, Vol.87 (7), p.071102-071102-3
Main Authors: Okamoto, Koichi, Niki, Isamu, Scherer, Axel, Narukawa, Yukio, Mukai, Takashi, Kawakami, Yoichi
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well (QW) at 440 nm by employing surface plasmons (SPs) probed by time-resolved photoluminescence spectroscopy. We explore this remarkable enhancement of the emission rates and intensities resulting from the efficient energy transfer from electron-hole pair recombination in the QW to electron vibrations of SPs at the metal-coated surface of the semiconductor heterostructure. This QW-SP coupling is expected to lead to a new class of super bright and high-speed light-emitting diodes (LEDs) that offer realistic alternatives to conventional fluorescent tubes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2010602