Surface plasmon enhanced spontaneous emission rate of InGaN ∕ GaN quantum wells probed by time-resolved photoluminescence spectroscopy

We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well (QW) at 440 nm by employing surface plasmons (SPs) probed by time-resolved photoluminescence spectroscopy. We explore this remarkable enhancement of the emission rates and intensities resulting from the efficie...

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Published in:Applied physics letters 2005-08, Vol.87 (7), p.071102-071102-3
Main Authors: Okamoto, Koichi, Niki, Isamu, Scherer, Axel, Narukawa, Yukio, Mukai, Takashi, Kawakami, Yoichi
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description We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well (QW) at 440 nm by employing surface plasmons (SPs) probed by time-resolved photoluminescence spectroscopy. We explore this remarkable enhancement of the emission rates and intensities resulting from the efficient energy transfer from electron-hole pair recombination in the QW to electron vibrations of SPs at the metal-coated surface of the semiconductor heterostructure. This QW-SP coupling is expected to lead to a new class of super bright and high-speed light-emitting diodes (LEDs) that offer realistic alternatives to conventional fluorescent tubes.
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title Surface plasmon enhanced spontaneous emission rate of InGaN ∕ GaN quantum wells probed by time-resolved photoluminescence spectroscopy
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