Influence of dislocations on photoluminescence of InGaN ∕ GaN multiple quantum wells

The influence of dislocations on photoluminescence (PL) of InGaN ∕ GaN multiple quantum wells (MQWs) is investigated by triple-axis x-ray diffraction (TAXRD), transmission electron microscopy (TEM), and PL spectra. The ω scan of every satellite peak by TAXRD is adopted to evaluate the mean screw and...

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Bibliographic Details
Published in:Applied physics letters 2005-08, Vol.87 (7), p.071908-071908-3
Main Authors: Zhang, J. C., Jiang, D. S., Sun, Q., Wang, J. F., Wang, Y. T., Liu, J. P., Chen, J., Jin, R. Q., Zhu, J. J., Yang, H., Dai, T., Jia, Q. J.
Format: Article
Language:English
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Summary:The influence of dislocations on photoluminescence (PL) of InGaN ∕ GaN multiple quantum wells (MQWs) is investigated by triple-axis x-ray diffraction (TAXRD), transmission electron microscopy (TEM), and PL spectra. The ω scan of every satellite peak by TAXRD is adopted to evaluate the mean screw and edge dislocation densities in MQWs. The results show that dislocations can lead to a reduction of the PL-integrated intensity of InGaN ∕ GaN MQWs under certain conditions, with edge dislocations playing a decisive role. Additionally, the dislocations can broaden the PL peak, but the effect becomes evident only under the condition when the interface roughness is relatively low.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2012531