InGaAsN ∕ GaAs quantum-well lasers using two-step and nitride passivation growth

The optical properties of InGaAsN QW grown on AlGaAs ∕ GaAs cladding layers were investigated. Al contamination in the quantum well due to the memory effect is responsible for the degradation of optical quality. We propose a growth method to reduce the Al contamination by growth interruption and dim...

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Bibliographic Details
Published in:Applied physics letters 2005-08, Vol.87 (9), p.091115-091115-3
Main Authors: Chiu, Pei-Chin, Yeh, Nien-Tze, Hong, Chao-Chi, Hsieh, Tung Po, Tsai, Yao-Tsong, Ho, Wen-Jeng, Chyi, Jen-Inn
Format: Article
Language:English
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Summary:The optical properties of InGaAsN QW grown on AlGaAs ∕ GaAs cladding layers were investigated. Al contamination in the quantum well due to the memory effect is responsible for the degradation of optical quality. We propose a growth method to reduce the Al contamination by growth interruption and dimethylhydrazine passivation. This approach improves the optical properties as well as simplifies the growth processes significantly as compared to the reported methods.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2037857