Thin-film ferromagnetic semiconductors based on Sb2−xVxTe3 with TC of 177K

Thin-film ferromagnetic semiconductors Sb2−xVxTe3 with the Curie temperature as high as 177K were prepared on sapphire (0001) substrates by molecular-beam epitaxy. Films of Sb2−xVxTe3 with x up to 0.35 display robust, out-of-plane ferromagnetic ordering that depends on the concentration of vanadium...

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Bibliographic Details
Published in:Applied physics letters 2005-09, Vol.87 (11)
Main Authors: Zhou, Zhenhua, Chien, Yi-Jiunn, Uher, Ctirad
Format: Article
Language:English
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Summary:Thin-film ferromagnetic semiconductors Sb2−xVxTe3 with the Curie temperature as high as 177K were prepared on sapphire (0001) substrates by molecular-beam epitaxy. Films of Sb2−xVxTe3 with x up to 0.35 display robust, out-of-plane ferromagnetic ordering that depends on the concentration of vanadium in the structure. The Curie temperature was determined from magnetization measurements and Arrott plots. Ferromagnetic order is manifested by hysteresis loops observed in magnetization, magnetoresistivity, and the anomalous Hall effect.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2045561