Charged exciton emission at 1.3 μ m from single InAs quantum dots grown by metalorganic chemical vapor deposition

We have studied the emission properties of self-organized InAs quantum dots (QDs) grown in an InGaAs quantum well by metalorganic chemical vapor deposition. Low-temperature photoluminescence spectroscopy shows emission from single QDs around 1300 nm ; we clearly observe the formation of neutral and...

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Bibliographic Details
Published in:Applied physics letters 2005-10, Vol.87 (17), p.172101-172101-3
Main Authors: Cade, N. I., Gotoh, H., Kamada, H., Tawara, T., Sogawa, T., Nakano, H., Okamoto, H.
Format: Article
Language:English
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Summary:We have studied the emission properties of self-organized InAs quantum dots (QDs) grown in an InGaAs quantum well by metalorganic chemical vapor deposition. Low-temperature photoluminescence spectroscopy shows emission from single QDs around 1300 nm ; we clearly observe the formation of neutral and charged exciton and biexciton states, and we obtain a biexciton binding energy of 3.1 meV . The dots exhibit an s - p shell splitting of approximately 100 meV , indicating strong confinement.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2093927