1.55 μ m emission from InAs quantum dots grown on GaAs

We report a comparative study on the growth of InAs quantum dots (QDs) on GaAs by metalorganic chemical vapor deposition using triethylgallium (TEGa) and trimethylgallium (TMGa) for the GaAs cap layer. QDs exhibit 1.3 μ m photoluminescence (PL) at room temperature, as the GaAs cap layer is directly...

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Bibliographic Details
Published in:Applied physics letters 2005-10, Vol.87 (15), p.151903-151903-3
Main Authors: Hsieh, Tung-Po, Chiu, Pei-Chin, Chyi, Jen-Inn, Yeh, Nien-Tze, Ho, Wen-Jeng, Chang, Wen-Hao, Hsu, Tzu-Min
Format: Article
Language:English
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Summary:We report a comparative study on the growth of InAs quantum dots (QDs) on GaAs by metalorganic chemical vapor deposition using triethylgallium (TEGa) and trimethylgallium (TMGa) for the GaAs cap layer. QDs exhibit 1.3 μ m photoluminescence (PL) at room temperature, as the GaAs cap layer is directly grown on the QDs. The PL emission can be extended to 1.49 μ m when an In 0.25 Ga 0.75 As overgrown layer is inserted between the cap layer and the InAs QDs. The use of TMGa or TEGa for the growth of the GaAs cap layer is essential for a further increase in the emission wavelength of the InAs QDs. Strong PL emission at 1.55 μ m with a linewidth of 28 meV can be obtained as the GaAs cap layer is grown by TEGa, while the optical properties degrade severely when using TMGa.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2099536