In situ hole doping of wide-gap semiconductors by dual-target simultaneous laser ablation: GaN and SiC epitaxial films

Apparatus for dual-target simultaneous laser ablation deposition and in situ doping techniques have been developed to achieve p -type doping during epitaxial growth of wide-band-gap semiconductors. The apparatus has two target holders with a target-rotation mechanism and a rotation-axis adjusting me...

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Bibliographic Details
Published in:Applied physics letters 2005-10, Vol.87 (16), p.162106-162106-3
Main Authors: Muto, Hachizo, Asano, Takashi, Wang, Rong-Ping, Kusumori, Takeshi
Format: Article
Language:English
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Summary:Apparatus for dual-target simultaneous laser ablation deposition and in situ doping techniques have been developed to achieve p -type doping during epitaxial growth of wide-band-gap semiconductors. The apparatus has two target holders with a target-rotation mechanism and a rotation-axis adjusting mechanism to obtain homogeneously doped films. Mg-doped GaN films have been fabricated on 6H-SiC(0001) and Si(111) substrates in N H 3 ambient by simultaneous ablation of GaN and Mg-metal targets using two lasers. Junctions of the films with n -type substrates show a diode curve characteristic of p - n junctions, but not for junction with p -Si, indicating hole doping without further procedures. In situ p -type doping to SiC was also achieved by using SiC and Al 4 C 3 targets.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2105989