High-performance GaN-based light-emitting diode using high-transparency Ni ∕ Au ∕ Al -doped ZnO composite contacts

We report on a high-transparency low-resistance composite contact structure on p - Ga N for light-emitting diode applications. The structure consists of a thin Ni ( 5 nm ) ∕ Au ( 5 nm ) layer overcoated with a sputtered Al-doped ZnO ( 170 nm ) layer. Enhancement in light emission intensity as high a...

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Bibliographic Details
Published in:Applied physics letters 2005-10, Vol.87 (18), p.181107-181107-3
Main Authors: Jung, Sung-Pyo, Ullery, Denise, Lin, Chien-Hung, Lee, Henry P., Lim, Jae-Hong, Hwang, Dae-Kue, Kim, Ja-Yeon, Yang, Eun-Jeong, Park, Seong-Ju
Format: Article
Language:English
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Summary:We report on a high-transparency low-resistance composite contact structure on p - Ga N for light-emitting diode applications. The structure consists of a thin Ni ( 5 nm ) ∕ Au ( 5 nm ) layer overcoated with a sputtered Al-doped ZnO ( 170 nm ) layer. Enhancement in light emission intensity as high as 74% at 40 mA and forward operating voltages in the range of 3.36 - 3.48 V at 20 mA are obtained for these devices using a two-step thermal annealing process.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2120913