Terahertz radiation from heavy-ion-irradiated In0.53Ga0.47As photoconductive antenna excited at 1.55μm

We investigate terahertz (THz) emission from heavy-ion-irradiated In0.53Ga0.47As photoconductive antennas excited at 1550 nm. The carrier lifetime in the highly irradiated In0.53Ga0.47As layer is less than 200 fs, the steady-state mobility is 490cm2V−1s−1, and the dark resistivity is 3Ωcm. The spect...

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Bibliographic Details
Published in:Applied physics letters 2005-11, Vol.87 (19)
Main Authors: Chimot, N., Mangeney, J., Joulaud, L., Crozat, P., Bernas, H., Blary, K., Lampin, J. F.
Format: Article
Language:English
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Summary:We investigate terahertz (THz) emission from heavy-ion-irradiated In0.53Ga0.47As photoconductive antennas excited at 1550 nm. The carrier lifetime in the highly irradiated In0.53Ga0.47As layer is less than 200 fs, the steady-state mobility is 490cm2V−1s−1, and the dark resistivity is 3Ωcm. The spectrum of the electric field radiating from the Br+-irradiated In0.53Ga0.47As antenna extends beyond 2 THz. The THz electric field magnitude is shown to saturate at high optical pump fluence, and the saturation fluence level increases with the irradiation dose, indicating that defect center scattering has a significant contribution to the transient mobility.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2126110