Dependence of electron density on Fermi energy in compensated n -type gallium antimonide

The majority electron density as a function of the Fermi energy is calculated in zinc blende, compensated n -type GaSb for donor densities between 10 16 and 10 19 cm − 3 . The compensation acceptor density is 10 16 cm − 3 . These calculations solve the charge neutrality equation self-consistently fo...

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Bibliographic Details
Published in:Journal of applied physics 2005-11, Vol.98 (10), p.103705-103705-6
Main Authors: Bennett, Herbert S., Hung, Howard, Heckert, Alan
Format: Article
Language:English
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Summary:The majority electron density as a function of the Fermi energy is calculated in zinc blende, compensated n -type GaSb for donor densities between 10 16 and 10 19 cm − 3 . The compensation acceptor density is 10 16 cm − 3 . These calculations solve the charge neutrality equation self-consistently for a four-band model (three conduction subbands at Γ , L , and X and one equivalent valence band at Γ ) of GaSb. Our calculations assume parabolic densities of states and thus do not treat the density-of-states modifications due to high concentrations of dopants, many-body effects, and nonparabolicity of the bands. Even with these assumptions, the results are important for interpreting optical measurements such as Raman scattering measurements that are proposed as a nondestructive method for wafer acceptance tests.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2134878