H-sensitive radiative recombination path in Si nanoclusters embedded in SiO2

The room-temperature photoluminescence (PL) from silicon nanocrystals embedded in a SiO2 matrix fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition and subsequent annealing in Ar and (Ar+5%H2) was studied. In addition to strong increases of the integrated PL intensit...

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Bibliographic Details
Published in:Applied physics letters 2005-11, Vol.87 (21)
Main Authors: Comedi, D., Zalloum, O. H. Y., Mascher, P.
Format: Article
Language:English
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Summary:The room-temperature photoluminescence (PL) from silicon nanocrystals embedded in a SiO2 matrix fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition and subsequent annealing in Ar and (Ar+5%H2) was studied. In addition to strong increases of the integrated PL intensity (factors of ∼4 to 10), the selective enhancement of contributions to the PL spectra at long wavelengths was observed for (Ar+5%H2) annealings. The selective H passivation of Si dangling bonds in disordered Si nanoclusters where radiative recombination proceeds through disorder-induced shallow states is proposed as a possible explanation for the observed effects.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2135382