Surface oxide relationships to band bending in GaN

A trend of increased near-surface valence band maximum band bending with increasing O ∕ Ga relative fraction was observed, extrapolating to 2.7 eV ± 0.1 eV for pristine GaN surfaces (0% O 1 s peak area). This trend of apparent oxide overlayer coverage affecting the band bending linearly could lead t...

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Bibliographic Details
Published in:Applied physics letters 2006-01, Vol.88 (1), p.013506-013506-3
Main Authors: Garcia, Michael A., Wolter, Scott D., Kim, Tong-Ho, Choi, Soojeong, Baier, Jamie, Brown, April, Losurdo, Maria, Bruno, Giovanni
Format: Article
Language:English
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Summary:A trend of increased near-surface valence band maximum band bending with increasing O ∕ Ga relative fraction was observed, extrapolating to 2.7 eV ± 0.1 eV for pristine GaN surfaces (0% O 1 s peak area). This trend of apparent oxide overlayer coverage affecting the band bending linearly could lead to better understanding and characterization of oxidized GaN surfaces to control band bending for sensors or other devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2158701