Specific contact resistivity of nanowire devices

We present a study of specific contact resistivity from multiterminal Kelvin measurements for GaN nanowire (NW) devices. Nanowire specific contact resistivity is found to be process-independent and in good agreement to that of epitaxially grown GaN. A strong dependence of NW specific contact resisti...

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Bibliographic Details
Published in:Applied physics letters 2006-01, Vol.88 (5), p.053106-053106-3
Main Authors: Stern, E., Cheng, G., Young, M. P., Reed, M. A.
Format: Article
Language:English
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Summary:We present a study of specific contact resistivity from multiterminal Kelvin measurements for GaN nanowire (NW) devices. Nanowire specific contact resistivity is found to be process-independent and in good agreement to that of epitaxially grown GaN. A strong dependence of NW specific contact resistivity on carrier density is observed to be in good agreement with theory.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2163454