Analysis of electron time-of-flight photocurrent data from a - Se

Electron time-of-flight transient photocurrents from amorphous selenium ( a - Se ) films were examined over the range of temperatures and applied electric fields in order to deduce a consistent model for the distribution of localized states in the a - Se conduction band tail. Superimposed on an expo...

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Bibliographic Details
Published in:Journal of applied physics 2006-04, Vol.99 (8), p.083702-083702-4
Main Authors: Emelianova, E. V., Benkhedir, M. L., Brinza, M., Adriaenssens, G. J.
Format: Article
Language:English
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Summary:Electron time-of-flight transient photocurrents from amorphous selenium ( a - Se ) films were examined over the range of temperatures and applied electric fields in order to deduce a consistent model for the distribution of localized states in the a - Se conduction band tail. Superimposed on an exponential tail with characteristic energy of 20 meV , a Gaussian defect band around E − E c = 0.3 eV controls the field-independent drift mobility, and a broad distribution of deeper electron traps is responsible for the significant emission currents that are observed for several decades of time after the transit time.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2187395