Afterpulsing in Geiger-mode avalanche photodiodes for 1.06μm wavelength

We consider the phenomenon of afterpulsing in avalanche photodiodes (APDs) operating in gated and free-running Geiger mode. An operational model of afterpulsing and other noise characteristics of APDs predicts the noise behavior observed in the free-running mode. We also use gated-mode data to inves...

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Published in:Applied physics letters 2006-03, Vol.88 (13)
Main Authors: Jensen, K. E., Hopman, P. I., Duerr, E. K., Dauler, E. A., Donnelly, J. P., Groves, S. H., Mahoney, L. J., McIntosh, K. A., Molvar, K. M., Napoleone, A., Oakley, D. C., Verghese, S., Vineis, C. J., Younger, R. D.
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cited_by cdi_FETCH-LOGICAL-c229t-3980ec5fdfbf61c5c42d2d33cbfb87d924a09c323145338e5e9800ed0d8c59af3
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container_issue 13
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container_title Applied physics letters
container_volume 88
creator Jensen, K. E.
Hopman, P. I.
Duerr, E. K.
Dauler, E. A.
Donnelly, J. P.
Groves, S. H.
Mahoney, L. J.
McIntosh, K. A.
Molvar, K. M.
Napoleone, A.
Oakley, D. C.
Verghese, S.
Vineis, C. J.
Younger, R. D.
description We consider the phenomenon of afterpulsing in avalanche photodiodes (APDs) operating in gated and free-running Geiger mode. An operational model of afterpulsing and other noise characteristics of APDs predicts the noise behavior observed in the free-running mode. We also use gated-mode data to investigate possible sources of afterpulsing in these devices. For 30-μm-diam, 1.06-μm-wavelength InGaAsP∕InP APDs operated at 290K and 4V overbias, we obtained a dominant trap lifetime of τd=0.32μs, a trap energy of 0.11eV, and a baseline dark count rate 245kHz.
doi_str_mv 10.1063/1.2189187
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title Afterpulsing in Geiger-mode avalanche photodiodes for 1.06μm wavelength
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