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Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications
We report the growth and characterization of thin (
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| Published in: | Applied physics letters 2006-04, Vol.88 (15) |
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| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c295t-1c98e09f8ae2a76e26f298b269acc3a9a8207e33f1d20862acdd9760714f60f53 |
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| container_issue | 15 |
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| container_title | Applied physics letters |
| container_volume | 88 |
| creator | Kelly, D. Q. Wiedmann, I. Donnelly, J. P. Joshi, S. V. Dey, S. Banerjee, S. K. Garcia-Gutierrez, D. I. José-Yacamán, M. |
| description | We report the growth and characterization of thin ( |
| doi_str_mv | 10.1063/1.2195008 |
| format | article |
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Q. ; Wiedmann, I. ; Donnelly, J. P. ; Joshi, S. V. ; Dey, S. ; Banerjee, S. K. ; Garcia-Gutierrez, D. I. ; José-Yacamán, M.</creator><creatorcontrib>Kelly, D. Q. ; Wiedmann, I. ; Donnelly, J. P. ; Joshi, S. V. ; Dey, S. ; Banerjee, S. K. ; Garcia-Gutierrez, D. I. ; José-Yacamán, M.</creatorcontrib><description>We report the growth and characterization of thin (<35nm) germanium-carbon alloy (Ge1−xCx) layers grown directly on Si by ultrahigh-vacuum chemical vapor deposition, with capacitance-voltage and leakage characteristics of the first high-κ/metal gate metal-oxide-semiconductor (MOS) capacitors fabricated on Ge1−xCx. The Ge1−xCx layers have an average C concentration of approximately 1at.% and were obtained using the reaction of CH3GeH3 and GeH4 at a deposition pressure of 5mTorr and growth temperature of 450°C. The Ge1−xCx films were characterized by secondary ion mass spectrometry, atomic force microscopy, x-ray diffraction, and cross-sectional transmission electron microscopy. A modified etch pit technique was used to calculate the threading dislocation density. The x-ray diffraction results showed that the Ge1−xCx layers were partially relaxed. The fabricated MOS capacitors exhibited well-behaved electrical characteristics, demonstrating the feasibility of Ge1−xCx layers on Si for future high-carrier-mobility MOS devices.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2195008</identifier><language>eng</language><ispartof>Applied physics letters, 2006-04, Vol.88 (15)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-1c98e09f8ae2a76e26f298b269acc3a9a8207e33f1d20862acdd9760714f60f53</citedby><cites>FETCH-LOGICAL-c295t-1c98e09f8ae2a76e26f298b269acc3a9a8207e33f1d20862acdd9760714f60f53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,782,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Kelly, D. 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The Ge1−xCx layers have an average C concentration of approximately 1at.% and were obtained using the reaction of CH3GeH3 and GeH4 at a deposition pressure of 5mTorr and growth temperature of 450°C. The Ge1−xCx films were characterized by secondary ion mass spectrometry, atomic force microscopy, x-ray diffraction, and cross-sectional transmission electron microscopy. A modified etch pit technique was used to calculate the threading dislocation density. The x-ray diffraction results showed that the Ge1−xCx layers were partially relaxed. 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V.</creatorcontrib><creatorcontrib>Dey, S.</creatorcontrib><creatorcontrib>Banerjee, S. K.</creatorcontrib><creatorcontrib>Garcia-Gutierrez, D. I.</creatorcontrib><creatorcontrib>José-Yacamán, M.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kelly, D. Q.</au><au>Wiedmann, I.</au><au>Donnelly, J. P.</au><au>Joshi, S. V.</au><au>Dey, S.</au><au>Banerjee, S. K.</au><au>Garcia-Gutierrez, D. I.</au><au>José-Yacamán, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications</atitle><jtitle>Applied physics letters</jtitle><date>2006-04-10</date><risdate>2006</risdate><volume>88</volume><issue>15</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report the growth and characterization of thin (<35nm) germanium-carbon alloy (Ge1−xCx) layers grown directly on Si by ultrahigh-vacuum chemical vapor deposition, with capacitance-voltage and leakage characteristics of the first high-κ/metal gate metal-oxide-semiconductor (MOS) capacitors fabricated on Ge1−xCx. The Ge1−xCx layers have an average C concentration of approximately 1at.% and were obtained using the reaction of CH3GeH3 and GeH4 at a deposition pressure of 5mTorr and growth temperature of 450°C. The Ge1−xCx films were characterized by secondary ion mass spectrometry, atomic force microscopy, x-ray diffraction, and cross-sectional transmission electron microscopy. A modified etch pit technique was used to calculate the threading dislocation density. The x-ray diffraction results showed that the Ge1−xCx layers were partially relaxed. The fabricated MOS capacitors exhibited well-behaved electrical characteristics, demonstrating the feasibility of Ge1−xCx layers on Si for future high-carrier-mobility MOS devices.</abstract><doi>10.1063/1.2195008</doi></addata></record> |
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| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP_美国物理联合会现刊（与NSTL共建） |
| title | Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications |
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