Characterization and luminescence properties of Sr2Si5N8:Eu2+ phosphor for white light-emitting-diode illumination

Eu 2 + -doped ternary nitride phosphor, Sr2Si5N8:Eu2+, was prepared by the carbothermal reduction and nitridation method. The Rietveld refinement analysis showed that the single phase products were obtained. Two main absorption bands were observed on the diffuse reflection spectra peaking at about 3...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2006-04, Vol.88 (16)
Main Authors: Piao, Xianqing, Horikawa, Takashi, Hanzawa, Hiromasa, Machida, Ken-ichi
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c225t-d700db73daa4edba81484e5e1a22ea53db7c244c1533950108fdbed6087c63413
cites cdi_FETCH-LOGICAL-c225t-d700db73daa4edba81484e5e1a22ea53db7c244c1533950108fdbed6087c63413
container_end_page
container_issue 16
container_start_page
container_title Applied physics letters
container_volume 88
creator Piao, Xianqing
Horikawa, Takashi
Hanzawa, Hiromasa
Machida, Ken-ichi
description Eu 2 + -doped ternary nitride phosphor, Sr2Si5N8:Eu2+, was prepared by the carbothermal reduction and nitridation method. The Rietveld refinement analysis showed that the single phase products were obtained. Two main absorption bands were observed on the diffuse reflection spectra peaking at about 330 and 420nm, so that the resultant phosphor can be effectively excited by InGaN light-emitting diodes. The emission peak position of (Sr1−xEux)2Si5N8:Eu2+ series varied from 618to690nm with increasing Eu2+ ion concentration. The redshift behavior of the emission band was discussed on the basis of the configuration coordination model.
doi_str_mv 10.1063/1.2196064
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2196064</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_2196064</sourcerecordid><originalsourceid>FETCH-LOGICAL-c225t-d700db73daa4edba81484e5e1a22ea53db7c244c1533950108fdbed6087c63413</originalsourceid><addsrcrecordid>eNotkMtLAzEYxIMoWKsH_4NcRVLz5bEPb1LqA4oequclTb7tRvZFkiL617vWHn4Mw8AMDCHXwBfAM3kHCwFlxjN1QmbA85xJgOKUzDjnkmWlhnNyEePnZLWQckbCsjHB2ITB_5jkh56a3tF23_keo8XeIh3DMGJIHiMdaroJYuP1a3G_2otbOjZDnAi0nvhqfELa-l2TGHY-Jd_vmPODQ-rbQ-Vh4ZKc1aaNeHXUOfl4XL0vn9n67ell-bBmVgidmMs5d9tcOmMUuq0pQBUKNYIRAo2WU2aFUha0lKXmwIvabdFlvMhtJhXIObn577VhiDFgXY3BdyZ8V8Crv7MqqI5nyV973V2z</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Characterization and luminescence properties of Sr2Si5N8:Eu2+ phosphor for white light-emitting-diode illumination</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>AIP Journals (American Institute of Physics)</source><creator>Piao, Xianqing ; Horikawa, Takashi ; Hanzawa, Hiromasa ; Machida, Ken-ichi</creator><creatorcontrib>Piao, Xianqing ; Horikawa, Takashi ; Hanzawa, Hiromasa ; Machida, Ken-ichi</creatorcontrib><description>Eu 2 + -doped ternary nitride phosphor, Sr2Si5N8:Eu2+, was prepared by the carbothermal reduction and nitridation method. The Rietveld refinement analysis showed that the single phase products were obtained. Two main absorption bands were observed on the diffuse reflection spectra peaking at about 330 and 420nm, so that the resultant phosphor can be effectively excited by InGaN light-emitting diodes. The emission peak position of (Sr1−xEux)2Si5N8:Eu2+ series varied from 618to690nm with increasing Eu2+ ion concentration. The redshift behavior of the emission band was discussed on the basis of the configuration coordination model.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2196064</identifier><language>eng</language><ispartof>Applied physics letters, 2006-04, Vol.88 (16)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c225t-d700db73daa4edba81484e5e1a22ea53db7c244c1533950108fdbed6087c63413</citedby><cites>FETCH-LOGICAL-c225t-d700db73daa4edba81484e5e1a22ea53db7c244c1533950108fdbed6087c63413</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,782,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Piao, Xianqing</creatorcontrib><creatorcontrib>Horikawa, Takashi</creatorcontrib><creatorcontrib>Hanzawa, Hiromasa</creatorcontrib><creatorcontrib>Machida, Ken-ichi</creatorcontrib><title>Characterization and luminescence properties of Sr2Si5N8:Eu2+ phosphor for white light-emitting-diode illumination</title><title>Applied physics letters</title><description>Eu 2 + -doped ternary nitride phosphor, Sr2Si5N8:Eu2+, was prepared by the carbothermal reduction and nitridation method. The Rietveld refinement analysis showed that the single phase products were obtained. Two main absorption bands were observed on the diffuse reflection spectra peaking at about 330 and 420nm, so that the resultant phosphor can be effectively excited by InGaN light-emitting diodes. The emission peak position of (Sr1−xEux)2Si5N8:Eu2+ series varied from 618to690nm with increasing Eu2+ ion concentration. The redshift behavior of the emission band was discussed on the basis of the configuration coordination model.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNotkMtLAzEYxIMoWKsH_4NcRVLz5bEPb1LqA4oequclTb7tRvZFkiL617vWHn4Mw8AMDCHXwBfAM3kHCwFlxjN1QmbA85xJgOKUzDjnkmWlhnNyEePnZLWQckbCsjHB2ITB_5jkh56a3tF23_keo8XeIh3DMGJIHiMdaroJYuP1a3G_2otbOjZDnAi0nvhqfELa-l2TGHY-Jd_vmPODQ-rbQ-Vh4ZKc1aaNeHXUOfl4XL0vn9n67ell-bBmVgidmMs5d9tcOmMUuq0pQBUKNYIRAo2WU2aFUha0lKXmwIvabdFlvMhtJhXIObn577VhiDFgXY3BdyZ8V8Crv7MqqI5nyV973V2z</recordid><startdate>20060417</startdate><enddate>20060417</enddate><creator>Piao, Xianqing</creator><creator>Horikawa, Takashi</creator><creator>Hanzawa, Hiromasa</creator><creator>Machida, Ken-ichi</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20060417</creationdate><title>Characterization and luminescence properties of Sr2Si5N8:Eu2+ phosphor for white light-emitting-diode illumination</title><author>Piao, Xianqing ; Horikawa, Takashi ; Hanzawa, Hiromasa ; Machida, Ken-ichi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c225t-d700db73daa4edba81484e5e1a22ea53db7c244c1533950108fdbed6087c63413</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Piao, Xianqing</creatorcontrib><creatorcontrib>Horikawa, Takashi</creatorcontrib><creatorcontrib>Hanzawa, Hiromasa</creatorcontrib><creatorcontrib>Machida, Ken-ichi</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Piao, Xianqing</au><au>Horikawa, Takashi</au><au>Hanzawa, Hiromasa</au><au>Machida, Ken-ichi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization and luminescence properties of Sr2Si5N8:Eu2+ phosphor for white light-emitting-diode illumination</atitle><jtitle>Applied physics letters</jtitle><date>2006-04-17</date><risdate>2006</risdate><volume>88</volume><issue>16</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Eu 2 + -doped ternary nitride phosphor, Sr2Si5N8:Eu2+, was prepared by the carbothermal reduction and nitridation method. The Rietveld refinement analysis showed that the single phase products were obtained. Two main absorption bands were observed on the diffuse reflection spectra peaking at about 330 and 420nm, so that the resultant phosphor can be effectively excited by InGaN light-emitting diodes. The emission peak position of (Sr1−xEux)2Si5N8:Eu2+ series varied from 618to690nm with increasing Eu2+ ion concentration. The redshift behavior of the emission band was discussed on the basis of the configuration coordination model.</abstract><doi>10.1063/1.2196064</doi></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2006-04, Vol.88 (16)
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_2196064
source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP Journals (American Institute of Physics)
title Characterization and luminescence properties of Sr2Si5N8:Eu2+ phosphor for white light-emitting-diode illumination
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T05%3A40%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Characterization%20and%20luminescence%20properties%20of%20Sr2Si5N8:Eu2+%20phosphor%20for%20white%20light-emitting-diode%20illumination&rft.jtitle=Applied%20physics%20letters&rft.au=Piao,%20Xianqing&rft.date=2006-04-17&rft.volume=88&rft.issue=16&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.2196064&rft_dat=%3Ccrossref%3E10_1063_1_2196064%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c225t-d700db73daa4edba81484e5e1a22ea53db7c244c1533950108fdbed6087c63413%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true