Wide-band "black silicon" based on porous silicon

Solar cells and optical detection devices often incorporate antireflective surfaces to reduce undesired reflection and enhance optical absorption. This letter reports a "black silicon" structure of antireflective porous silicon fabricated by using electrochemical etching. The sample has a...

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Bibliographic Details
Published in:Applied physics letters 2006-04, Vol.88 (17), p.171907-171907-3
Main Authors: Ma, L. L., Zhou, Y. C., Jiang, N., Lu, X., Shao, J., Lu, W., Ge, J., Ding, X. M., Hou, X. Y.
Format: Article
Language:English
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Summary:Solar cells and optical detection devices often incorporate antireflective surfaces to reduce undesired reflection and enhance optical absorption. This letter reports a "black silicon" structure of antireflective porous silicon fabricated by using electrochemical etching. The sample has a gradient-index multilayer structure, i.e., the refraction indices of the structure increase from the top (near the air) to the bottom (near the Si substrate). Reflectance below 5% is obtained over a broad wave number range ( 3000 - 28000 cm − 1 ) and the depression mechanism of the optical reflectance is analyzed by simulating the structure with the transfer matrix method. The simulated result fits the measured spectra well.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2199593