Shape-controlled growth of single-crystalline Ge nanostructures

We report the shape-controlled growth of single-crystalline germanium nanostructures by Au catalyst-assisted chemical-vapor syntheses using Ge H 4 as a precursor. By independently controlling the axial- and the radial-growth kinetics near the eutectic temperature of Au and Ge, we reproducibly direct...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2006-05, Vol.88 (19), p.193105-193105-3
Main Authors: Jin, Chang-Beom, Yang, Jee-Eun, Jo, Moon-Ho
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report the shape-controlled growth of single-crystalline germanium nanostructures by Au catalyst-assisted chemical-vapor syntheses using Ge H 4 as a precursor. By independently controlling the axial- and the radial-growth kinetics near the eutectic temperature of Au and Ge, we reproducibly direct the shape of Ge nanostructures from nanowires to nanocones with various aspect ratios. Based on our observation of the shape variation we discuss a phenomenological model of the growth of Ge nanostructures that goes beyond the conventional vapor-liquid-solid growth mechanism. The precise control of the shape in semiconductor nanostructures in our study suggests the implication of various applications into electronic and optical devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2201899