Excavation rate of silicon surface nanoholes

Silicon surface nanoholes, that are small pits introduced spontaneously on electron exit surfaces of silicon foils under electron irradiation, are excavated at a constant rate with increasing electron dose. On the other hand, surface nanoholes on electron entrance surfaces become shallow under elect...

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Bibliographic Details
Published in:Journal of applied physics 2006-06, Vol.99 (12), p.126107-126107-3
Main Authors: Ohno, Yutaka, Takeda, Seiji, Ichihashi, Toshinari, Iijima, Sumio
Format: Article
Language:English
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Summary:Silicon surface nanoholes, that are small pits introduced spontaneously on electron exit surfaces of silicon foils under electron irradiation, are excavated at a constant rate with increasing electron dose. On the other hand, surface nanoholes on electron entrance surfaces become shallow under electron irradiation. The mechanism for the excavation and shallowing of surface nanoholes is discussed in terms of the movement of surface vacancies assisted by irradiating electrons.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2206693