Low-resistivity, stable p-type ZnO thin films realized using a Li–N dual-acceptor doping method

A Li–N dual-acceptor doping method has been developed to prepare p-type ZnO thin films by pulsed laser deposition. The lowest room-temperature resistivity is found to be ∼0.93Ωcm, much lower than that of Li or N monodoped ZnO films. The p-type conductivity of ZnO:(Li,N) films is very reproducible an...

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Bibliographic Details
Published in:Applied physics letters 2006-05, Vol.88 (22)
Main Authors: Lu, J. G., Zhang, Y. Z., Ye, Z. Z., Zhu, L. P., Wang, L., Zhao, B. H., Liang, Q. L.
Format: Article
Language:English
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Summary:A Li–N dual-acceptor doping method has been developed to prepare p-type ZnO thin films by pulsed laser deposition. The lowest room-temperature resistivity is found to be ∼0.93Ωcm, much lower than that of Li or N monodoped ZnO films. The p-type conductivity of ZnO:(Li,N) films is very reproducible and stable, with acceptable crystal quality. The acceptor activation energy in ZnO:(Li,N) is about 95meV. ZnO-based homostructural p-n junctions were fabricated by depositing an n-type ZnO:Al layer on a p-type ZnO:(Li,N) layer, confirmed by secondary ion mass spectroscopy. The current-voltage characteristics exhibit their inherent rectifying behaviors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2209191