Superconductive B-doped nanocrystalline diamond thin films:Electrical transport and Raman spectra

Electrical transport properties of thin boron doped nanocrystalline diamond films with thicknesses of 60 - 500 nm have been studied. The Raman spectra measured exhibit Fano resonances, characteristic for B concentrations close to the metal-to-insulator transition. Upon increasing the B concentration...

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Bibliographic Details
Published in:Applied physics letters 2006-06, Vol.88 (23), p.232111-232111-3
Main Authors: Nesládek, Miloš, Tromson, Dominique, Mer, Christine, Bergonzo, Philippe, Hubik, Pavel, Mares, Jiri J.
Format: Article
Language:English
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Summary:Electrical transport properties of thin boron doped nanocrystalline diamond films with thicknesses of 60 - 500 nm have been studied. The Raman spectra measured exhibit Fano resonances, characteristic for B concentrations close to the metal-to-insulator transition. Upon increasing the B concentration, the s p 2 carbon related Raman resonances vanish. In such boron-doped nanocrystalline diamond films, a positive magnetoresistance could be observed at liquid helium temperatures. The boron doped diamond films show conductivity similar to that of B-doped epitaxial diamond without any significant contribution of the grain boundary transport, leading to the superconductive transition in nanocrystalline diamond at ∼ 1.66 K .
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2211055