Room temperature ferroelectric properties of Mn-substituted BiFeO3 thin films deposited on Pt electrodes using chemical solution deposition

Mn-substituted BiFeO3 (BFO) thin films were fabricated by chemical solution deposition on Pt∕Ti∕SiO2∕Si(100) structures. X-ray diffraction analysis revealed that the BFO lattice was somewhat distorted when 5% of Fe atoms were substituted with Mn atoms, but no secondary phase appeared by Mn substitut...

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Bibliographic Details
Published in:Applied physics letters 2006-06, Vol.88 (26)
Main Authors: Singh, S. K., Ishiwara, H., Maruyama, K.
Format: Article
Language:English
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Summary:Mn-substituted BiFeO3 (BFO) thin films were fabricated by chemical solution deposition on Pt∕Ti∕SiO2∕Si(100) structures. X-ray diffraction analysis revealed that the BFO lattice was somewhat distorted when 5% of Fe atoms were substituted with Mn atoms, but no secondary phase appeared by Mn substitution up to 20%. The leakage current density at higher electric field than 0.6MV∕cm decreased by Mn substitution of 3%–5%, compared with a pure BFO film. Because of the low leakage current density in the high electric field region, well saturated polarization hysteresis loops with remanent polarization of 100μC∕cm2 were observed in the 5% Mn-substituted BFO films at a measurement frequency of 1kHz.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2218819