Stress reduction in epitaxial GaN films on Si using cubic SiC as intermediate layers

• Published in: Journal of applied physics 2006-08, Vol.100 (3)
• Main Authors: Komiyama, Jun, Abe, Yoshihisa, Suzuki, Shunichi, Nakanishi, Hideo
• Format: Article
• Language: English
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.2226988

Stress in the epitaxial films of GaN on Si is reduced by using SiC as intermediate layers. The crystalline films of cubic SiC (0–1μm), thin AlN (50nm), and GaN (1–3μm) were prepared on 3in. (1 1 1) Si substrates—stacked in the order of GaN∕AlN∕SiC∕Si—by metalorganic vapor-phase epitaxy. It is revealed by Raman spectroscopy that the tensile stress in GaN is reduced to half (reduction of about 300MPa) for GaN on Si with SiC intermediate layers compared with GaN on Si without SiC intermediate layers. Because of stress reduction, crack-free GaN on Si with a thickness of 2μm was obtained by using SiC intermediate layers. Cracking was minimized even on thicker GaN on Si (3μm thick) with SiC intermediate layers. The SiC intermediate layers are promising for the realization of nitride based electronic devices on Si.