Generation-recombination noise in forward biased 4H-SiC p-n diodes

Low frequency noise has been studied in forward biased 4H-SiC p+-n diodes at current densities from 10−4to10A∕cm2. At small current densities j⩽10−3A∕cm2, the spectral noise density SI follows the law SI∝1∕f3∕2. At 10−3A∕cm2 

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2006-09, Vol.100 (6)
Main Authors: Rumyantsev, Sergey L., Dmitriev, Alexander P., Levinshtein, Michael E., Veksler, Dmitry, Shur, Michael S., Palmour, John W., Das, Mrinal K., Hull, Brett A.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Low frequency noise has been studied in forward biased 4H-SiC p+-n diodes at current densities from 10−4to10A∕cm2. At small current densities j⩽10−3A∕cm2, the spectral noise density SI follows the law SI∝1∕f3∕2. At 10−3A∕cm2 
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2345037