Synthesis of Si nanopyramids at SiOx∕Si interface for enhancing electroluminescence of Si-rich SiOx

Enhanced electroluminescence (EL) of ITO∕SiOx∕Si-nanopyramid/p-Si∕Al diode is investigated. By using low-power plasma enhanced chemical vapor deposition at high substrate temperature, anomalous (100)-oriented Si nanopyramids with a surface density of 1.6×1010cm−2 are synthesized at SiOx∕Si interface...

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Bibliographic Details
Published in:Applied physics letters 2006-08, Vol.89 (9)
Main Authors: Lin, Gong-Ru, Lin, Chi-Kuan, Chou, Li-Jen, Chueh, Yu-Lun
Format: Article
Language:English
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Summary:Enhanced electroluminescence (EL) of ITO∕SiOx∕Si-nanopyramid/p-Si∕Al diode is investigated. By using low-power plasma enhanced chemical vapor deposition at high substrate temperature, anomalous (100)-oriented Si nanopyramids with a surface density of 1.6×1010cm−2 are synthesized at SiOx∕Si interface prior to grow Si-rich SiOx film. Si nanopyramids greatly improve Fowler-Nordheim tunneling based carrier transport and benefit from less damaged oxide structure at lower biases. The turn-on voltage and threshold current density of the diode are reduced to 50V and 0.2mA∕cm2, respectively. Defect-related blue-green EL are suppressed to enhance stable near-infrared EL at 30nW with a lifetime >10h.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2345227