Annealing induced phase transformations in amorphous As2S3 films

Amorphous arsenic sulphide (As2S3) films prepared by ultrafast pulsed laser deposition have been vacuum annealed at a range of different temperatures. Measurements of the glass transition temperature indicate that a crystallization process initiates at annealing temperatures around 170°C. In combina...

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Bibliographic Details
Published in:Journal of applied physics 2006-09, Vol.100 (6)
Main Authors: Wang, R. P., Madden, S. J., Zha, C. J., Rode, A. V., Luther-Davies, B.
Format: Article
Language:English
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Summary:Amorphous arsenic sulphide (As2S3) films prepared by ultrafast pulsed laser deposition have been vacuum annealed at a range of different temperatures. Measurements of the glass transition temperature indicate that a crystallization process initiates at annealing temperatures around 170°C. In combination with Raman scattering analysis, we conclude that phase separation is intrinsic for our as-deposited films. During annealing two sorts of phase transformation are identified: one between different amorphous polymorphs, and another from the amorphous to a crystalline state. We point out a correlation between these two types of transformation and two characteristic time scales identified from measurements of the relaxation of the refractive index, and explain the Arrhenius and non-Arrhenius behaviors leading to the observed temporal characteristics.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2353787