Doping effect on dark currents in In0.5Ga0.5As∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

Stacked self-assembled In0.5Ga0.5As∕GaAs quantum dot infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition, with and without silicon dopants in the quantum dot layers, are investigated. The increase of dark currents observed at higher doping levels is attributed to hi...

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Bibliographic Details
Published in:Applied physics letters 2006-09, Vol.89 (11)
Main Authors: Drozdowicz-Tomsia, K., Goldys, E. M., Fu, Lan, Jagadish, C.
Format: Article
Language:English
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Summary:Stacked self-assembled In0.5Ga0.5As∕GaAs quantum dot infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition, with and without silicon dopants in the quantum dot layers, are investigated. The increase of dark currents observed at higher doping levels is attributed to higher defect density leading to stronger sequential resonant tunneling and to lowering of the operating temperature of the device.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2354432