Interface states for HfO2∕Si structure observed by x-ray photoelectron spectroscopy measurements under bias

A 1.0nm silicon nitride (SiN) layer can prevent reaction between HfO2 and Si completely. In this case, the interface state spectra obtained from x-ray photoelectron spectroscopy measurements under bias have two peaks above and below the midgap, attributable to Si dangling bonds interacting weakly wi...

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Bibliographic Details
Published in:Applied physics letters 2006-09, Vol.89 (12)
Main Authors: Maida, Osamu, Fukayama, Ken-ichi, Takahashi, Masao, Kobayashi, Hikaru, Kim, Young-Bae, Kim, Hyun-Chul, Choi, Duck-Kyun
Format: Article
Language:English
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Summary:A 1.0nm silicon nitride (SiN) layer can prevent reaction between HfO2 and Si completely. In this case, the interface state spectra obtained from x-ray photoelectron spectroscopy measurements under bias have two peaks above and below the midgap, attributable to Si dangling bonds interacting weakly with an atom in SiN, indicating a high atomic density of the SiN layer. When a HfO2 layer is deposited on a 1.0nm SiO2 layer, the SiO2 thickness increases to 1.6nm. For this structure, one interface state peak is present near the midgap, attributable to isolated Si dangling bonds, indicating a low atomic density.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2354436