Bias dependent inversion of tunneling magnetoresistance in Fe∕GaAs∕Fe tunnel junctions

The authors investigated spin dependent transport through Fe∕GaAs∕Fe tunnel junctions. The tunneling magnetoresistance (TMR) effect was probed for different types of Fe∕GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is increased and is observable at room temperature. If an...

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Bibliographic Details
Published in:Applied physics letters 2006-10, Vol.89 (16)
Main Authors: Moser, J., Zenger, M., Gerl, C., Schuh, D., Meier, R., Chen, P., Bayreuther, G., Wegscheider, W., Weiss, D., Lai, C.-H., Huang, R.-T., Kosuth, M., Ebert, H.
Format: Article
Language:English
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Summary:The authors investigated spin dependent transport through Fe∕GaAs∕Fe tunnel junctions. The tunneling magnetoresistance (TMR) effect was probed for different types of Fe∕GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is increased and is observable at room temperature. If an epitaxial Fe∕GaAs(001) interface is involved, the tunnel junction exhibits a bias dependent inversion of the TMR effect. This is a first experimental signature for band structure effects at an Fe∕GaAs interface and is relevant for spin injection experiments.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2364163