Direct observation of potential barriers in semiconducting barium titanate by electric force microscopy

We report the direct observation of the temperature-dependent potential barriers in the insulating grain boundary regions responsible for the positive temperature coefficient of resistivity phenomena observed in polycrystalline ( n -type) doped barium titanate. Electric force imaging using atomic fo...

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Bibliographic Details
Published in:Journal of applied physics 2006-11, Vol.100 (10), p.104501-104501-6
Main Authors: Mancini, M. W., Filho, P. I. Paulin
Format: Article
Language:English
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Summary:We report the direct observation of the temperature-dependent potential barriers in the insulating grain boundary regions responsible for the positive temperature coefficient of resistivity phenomena observed in polycrystalline ( n -type) doped barium titanate. Electric force imaging using atomic force microscopy was carried on with application of in situ external voltage, and revealed the presence of electric barriers, even in the semiconductor regime, observed below the ferroelectric-paraelectric transition temperature. The dependence of the potential barriers with the applied voltage was investigated.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2382454