Ferromagnetic interlayer exchange coupling in semiconductor SbCrTe∕Sb2Te3∕SbCrTe trilayer structures

Semiconductor trilayer structures with ferromagnetic Sb2−xCrxTe3 layers separated by a nonmagnetic Sb2Te3 layer of different thickness have been fabricated by molecular beam epitaxy. Ferromagnetic out-of-plane exchange coupling between the SbCrTe layers was found and the coupling strength, which can...

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Bibliographic Details
Published in:Applied physics letters 2006-12, Vol.89 (23)
Main Authors: Zhou, Zhenhua, Chien, Yi-Jiunn, Uher, Ctirad
Format: Article
Language:English
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Summary:Semiconductor trilayer structures with ferromagnetic Sb2−xCrxTe3 layers separated by a nonmagnetic Sb2Te3 layer of different thickness have been fabricated by molecular beam epitaxy. Ferromagnetic out-of-plane exchange coupling between the SbCrTe layers was found and the coupling strength, which can be represented by a saturation field HS, depends on both the Sb2Te3 spacer thickness and temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2398905