Enhanced thermal stability and emission intensity of InAs quantum dots covered by an InGaAsSb strain-reducing layer

An InGaAsSb overgrown layer, i.e., strain-reducing layer (SRL), is adopted to increase the emission intensity of InAs quantum dots (QDs) and extend the emission wavelength to as long as 1.42 μ m . InAs QDs capped with InGaAsSb SRL also exhibit a thermal activation energy of 534 meV , which is much h...

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Bibliographic Details
Published in:Applied physics letters 2006-12, Vol.89 (24), p.243103-243103-3
Main Authors: Liu, Wei-Sheng, Kuo, David M. T., Chyi, Jen-Inn, Chen, Wen-Yen, Chang, Hsing-Szu, Hsu, Tzu-Min
Format: Article
Language:English
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Summary:An InGaAsSb overgrown layer, i.e., strain-reducing layer (SRL), is adopted to increase the emission intensity of InAs quantum dots (QDs) and extend the emission wavelength to as long as 1.42 μ m . InAs QDs capped with InGaAsSb SRL also exhibit a thermal activation energy of 534 meV , which is much higher than that of InAs QDs with an InGaAs SRL. The increase in luminescence efficiency and thermal stability is attributed to the improved carrier confinement of the Ga As ∕ In As ∕ In Ga As Sb heterostructure.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2405872