Sol-gel-derived double-layered nanocrystal memory

The authors have used the sol-gel spin-coating method to fabricate a coexisting hafnium silicate and zirconium silicate double-layered nanocrystal (NC) memories. From transmission electron microscopic and x-ray photoelectron spectroscopic analyses, the authors determined that the hafnium silicate an...

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Bibliographic Details
Published in:Applied physics letters 2006-12, Vol.89 (25), p.252111-252111-3
Main Authors: Ko, Fu-Hsiang, You, Hsin-Chiang, Lei, Tan-Fu
Format: Article
Language:English
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Summary:The authors have used the sol-gel spin-coating method to fabricate a coexisting hafnium silicate and zirconium silicate double-layered nanocrystal (NC) memories. From transmission electron microscopic and x-ray photoelectron spectroscopic analyses, the authors determined that the hafnium silicate and zirconium silicate NCs formed after annealing at 900 ° C for 1 min . When using channel hot electron injection for charging and band-to-band tunneling-induced hot hole injection for discharging, the NC memories exhibited superior V th shifting because of the higher probability for trapping the charge carrier.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2416248