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Sol-gel-derived double-layered nanocrystal memory
The authors have used the sol-gel spin-coating method to fabricate a coexisting hafnium silicate and zirconium silicate double-layered nanocrystal (NC) memories. From transmission electron microscopic and x-ray photoelectron spectroscopic analyses, the authors determined that the hafnium silicate an...
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| Published in: | Applied physics letters 2006-12, Vol.89 (25), p.252111-252111-3 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c350t-b65495385bcfc1390c77bb884757b940eeb133b515c7bef8e0adacfafbe89e1d3 |
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| cites | cdi_FETCH-LOGICAL-c350t-b65495385bcfc1390c77bb884757b940eeb133b515c7bef8e0adacfafbe89e1d3 |
| container_end_page | 252111-3 |
| container_issue | 25 |
| container_start_page | 252111 |
| container_title | Applied physics letters |
| container_volume | 89 |
| creator | Ko, Fu-Hsiang You, Hsin-Chiang Lei, Tan-Fu |
| description | The authors have used the sol-gel spin-coating method to fabricate a coexisting hafnium silicate and zirconium silicate double-layered nanocrystal (NC) memories. From transmission electron microscopic and x-ray photoelectron spectroscopic analyses, the authors determined that the hafnium silicate and zirconium silicate NCs formed after annealing at
900
°
C
for
1
min
. When using channel hot electron injection for charging and band-to-band tunneling-induced hot hole injection for discharging, the NC memories exhibited superior
V
th
shifting because of the higher probability for trapping the charge carrier. |
| doi_str_mv | 10.1063/1.2416248 |
| format | article |
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900
°
C
for
1
min
. When using channel hot electron injection for charging and band-to-band tunneling-induced hot hole injection for discharging, the NC memories exhibited superior
V
th
shifting because of the higher probability for trapping the charge carrier.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2416248</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2006-12, Vol.89 (25), p.252111-252111-3</ispartof><rights>2006 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-b65495385bcfc1390c77bb884757b940eeb133b515c7bef8e0adacfafbe89e1d3</citedby><cites>FETCH-LOGICAL-c350t-b65495385bcfc1390c77bb884757b940eeb133b515c7bef8e0adacfafbe89e1d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2416248$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,782,784,795,27924,27925,76383</link.rule.ids></links><search><creatorcontrib>Ko, Fu-Hsiang</creatorcontrib><creatorcontrib>You, Hsin-Chiang</creatorcontrib><creatorcontrib>Lei, Tan-Fu</creatorcontrib><title>Sol-gel-derived double-layered nanocrystal memory</title><title>Applied physics letters</title><description>The authors have used the sol-gel spin-coating method to fabricate a coexisting hafnium silicate and zirconium silicate double-layered nanocrystal (NC) memories. From transmission electron microscopic and x-ray photoelectron spectroscopic analyses, the authors determined that the hafnium silicate and zirconium silicate NCs formed after annealing at
900
°
C
for
1
min
. When using channel hot electron injection for charging and band-to-band tunneling-induced hot hole injection for discharging, the NC memories exhibited superior
V
th
shifting because of the higher probability for trapping the charge carrier.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp1z09LxDAQh-EgCtbVg99grx6yZjpNk14EWfwHCx7Uc0jSiVTSVpIq9NvbZffqafjBy8DD2DWIDYgab2FTVlCXlT5hBQilOALoU1YIIZDXjYRzdpHz1zJliVgweBsj_6TIW0rdL7XrdvxxkXi0M6VlDnYYfZrzZOO6p35M8yU7CzZmujreFft4fHjfPvPd69PL9n7HPUoxcVfLqpGopfPBAzbCK-Wc1pWSyjWVIHKA6CRIrxwFTcK21gcbHOmGoMUVuzn89WnMOVEw36nrbZoNCLO3GjBH69LeHdrsu8lO3Tj8Hy9gs4DNEWz2YPwDzLNcJQ</recordid><startdate>20061218</startdate><enddate>20061218</enddate><creator>Ko, Fu-Hsiang</creator><creator>You, Hsin-Chiang</creator><creator>Lei, Tan-Fu</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20061218</creationdate><title>Sol-gel-derived double-layered nanocrystal memory</title><author>Ko, Fu-Hsiang ; You, Hsin-Chiang ; Lei, Tan-Fu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-b65495385bcfc1390c77bb884757b940eeb133b515c7bef8e0adacfafbe89e1d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ko, Fu-Hsiang</creatorcontrib><creatorcontrib>You, Hsin-Chiang</creatorcontrib><creatorcontrib>Lei, Tan-Fu</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ko, Fu-Hsiang</au><au>You, Hsin-Chiang</au><au>Lei, Tan-Fu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Sol-gel-derived double-layered nanocrystal memory</atitle><jtitle>Applied physics letters</jtitle><date>2006-12-18</date><risdate>2006</risdate><volume>89</volume><issue>25</issue><spage>252111</spage><epage>252111-3</epage><pages>252111-252111-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The authors have used the sol-gel spin-coating method to fabricate a coexisting hafnium silicate and zirconium silicate double-layered nanocrystal (NC) memories. From transmission electron microscopic and x-ray photoelectron spectroscopic analyses, the authors determined that the hafnium silicate and zirconium silicate NCs formed after annealing at
900
°
C
for
1
min
. When using channel hot electron injection for charging and band-to-band tunneling-induced hot hole injection for discharging, the NC memories exhibited superior
V
th
shifting because of the higher probability for trapping the charge carrier.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2416248</doi></addata></record> |
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| ispartof | Applied physics letters, 2006-12, Vol.89 (25), p.252111-252111-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_2416248 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP_美国物理联合会现刊（与NSTL共建） |
| title | Sol-gel-derived double-layered nanocrystal memory |
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