Electrical properties of Ohmic contacts to ZnSe nanowires and their application to nanowire-based photodetection

Multilayer Ti ∕ Au contacts were fabricated on individual, unintentionally doped zinc selenide nanowires with 80 nm nominal diameter. Four-terminal contact structures were used to independently measure current-voltage characteristics of contacts and nanowires. Specific contact resistivity of Ti ∕ Au...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2006-12, Vol.89 (26), p.261112-261112-3
Main Authors: Salfi, J., Philipose, U., de Sousa, C. F., Aouba, S., Ruda, H. E.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Multilayer Ti ∕ Au contacts were fabricated on individual, unintentionally doped zinc selenide nanowires with 80 nm nominal diameter. Four-terminal contact structures were used to independently measure current-voltage characteristics of contacts and nanowires. Specific contact resistivity of Ti ∕ Au contacts is 0.024 Ω cm 2 and intrinsic resistivity of the nanowires is approximately 1 Ω cm . The authors have also measured the spectral photocurrent responsivity of a ZnSe nanowire with 2.0 V bias across Ti ∕ Au electrodes, which exhibits a turnon for wavelengths shorter than 470 nm and reaches 22 A ∕ W for optical excitation at 400 nm .
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2424653