Catalyst-free growth of uniform ZnO nanowire arrays on prepatterned substrate

Uniform and ordered ZnO nanowire arrays have been fabricated on the nanopatterned SiO2∕GaN substrate without metal catalysts using hydrothermal synthesis. The nanopatterns on SiO2∕GaN substrate with an average diameter of 65nm are produced by inductively coupled plasma etching using anodic alumina t...

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Bibliographic Details
Published in:Applied physics letters 2006-12, Vol.89 (26)
Main Authors: Wang, Y. D., Zang, K. Y., Chua, S. J., Fonstad, C. G.
Format: Article
Language:English
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Summary:Uniform and ordered ZnO nanowire arrays have been fabricated on the nanopatterned SiO2∕GaN substrate without metal catalysts using hydrothermal synthesis. The nanopatterns on SiO2∕GaN substrate with an average diameter of 65nm are produced by inductively coupled plasma etching using anodic alumina template as a mask, which provides nucleation sites for the vertical ZnO nanowires growth. High quality of the aligned uniform ZnO nanowire arrays grown on GaN substrate was confirmed by x-ray diffraction, transmission electron microscopy, and photoluminescence. This growth technique provides a cost-effective approach to fabricate ordered nanowire arrays with controlled size, which may benefit the nanowire device applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2425036