Atomic ordering effect of quantum dots embedded in InGaN∕GaN multiquantum well structures

The authors have studied the micro-Raman analysis on the InGaN∕GaN multiquantum well structures grown by metal organic chemical vapor deposition. For the quantum well structure with the trapezoidal-type, Raman vibration modes at the region of 610.4–640.6cm−1 on the c(0001) plane and 210cm−1 on the a...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2007-01, Vol.90 (1)
Main Author: Kim, Keunjoo
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The authors have studied the micro-Raman analysis on the InGaN∕GaN multiquantum well structures grown by metal organic chemical vapor deposition. For the quantum well structure with the trapezoidal-type, Raman vibration modes at the region of 610.4–640.6cm−1 on the c(0001) plane and 210cm−1 on the a(0001) plane were observed. These modes provide the atomically ordered superlattice structures of InGaN quantum dot formation of the wurtzite structures of Ga1In2N3 alloys corresponding to the In composition of x=0.67. The formation of quantum dots around the quantum well region was observed in the highly resolved transmission electron microscopic image.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2430486