Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor

For VO2-based two-terminal devices, the first-order metal-insulator transition (MIT, jump) is controlled by an applied voltage and temperature, and an intermediate monoclinic metal phase between the MIT and the structural phase transition (SPT) is observed. The conductivity of this phase linearly in...

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Bibliographic Details
Published in:Applied physics letters 2007-01, Vol.90 (2)
Main Authors: Kim, Bong-Jun, Lee, Yong Wook, Chae, Byung-Gyu, Yun, Sun Jin, Oh, Soo-Young, Kim, Hyun-Tak, Lim, Yong-Sik
Format: Article
Language:English
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Summary:For VO2-based two-terminal devices, the first-order metal-insulator transition (MIT, jump) is controlled by an applied voltage and temperature, and an intermediate monoclinic metal phase between the MIT and the structural phase transition (SPT) is observed. The conductivity of this phase linearly increases with increasing temperature up to TSPT≈68°C and becomes maximum at TSPT. Optical microscopic observation reveals the absence of a local current path in the metal phase. The current uniformly flows throughout the surface of the VO2 film when the MIT occurs. This device can be used as a programmable critical temperature sensor where the applied voltage is controlled by a program.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2431456