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Heteroepitaxial growth of Nb-doped SrTiO3 films on Si substrates by pulsed laser deposition for resistance memory applications
Epitaxial Nb-doped SrTiO3 films grown on Si substrates for nonvolatile resistance memory applications were investigated. With a TiN buffer layer, a high-quality epitaxial Nb-doped SrTiO3 film was grown on the Si substrate, which was confirmed through x-ray diffraction and transmission electron micro...
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Published in: | Applied physics letters 2007-01, Vol.90 (5) |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Epitaxial Nb-doped SrTiO3 films grown on Si substrates for nonvolatile resistance memory applications were investigated. With a TiN buffer layer, a high-quality epitaxial Nb-doped SrTiO3 film was grown on the Si substrate, which was confirmed through x-ray diffraction and transmission electron microscopy. Compared with a control sample grown on a silicon substrate without a TiN buffer layer, the epitaxial Nb-doped SrTiO3 samples with the TiN buffer layer show the good resistance memory characteristics of a high resistance ratio, good retention characteristics, and uniformity. In terms of process compatibility with the standard silicon process, epitaxial Nb-doped SrTiO3 samples with a TiN buffer layer have the potential for use in future nonvolatile resistance memory applications. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2435330 |