Room temperature p - n ZnO blue-violet light-emitting diodes

ZnO p - n junction light-emitting diodes (LEDs) were fabricated on c -plane Al 2 O 3 substrates by plasma-assisted molecular beam epitaxy. Gas mixture of N 2 and O 2 was used as the p -type dopant, by which the double-donor doping of N 2 ( O ) can be avoided significantly. The fabricated p -type ZnO...

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Bibliographic Details
Published in:Applied physics letters 2007-01, Vol.90 (4), p.042113-042113-3
Main Authors: Wei, Z. P., Lu, Y. M., Shen, D. Z., Zhang, Z. Z., Yao, B., Li, B. H., Zhang, J. Y., Zhao, D. X., Fan, X. W., Tang, Z. K.
Format: Article
Language:English
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Summary:ZnO p - n junction light-emitting diodes (LEDs) were fabricated on c -plane Al 2 O 3 substrates by plasma-assisted molecular beam epitaxy. Gas mixture of N 2 and O 2 was used as the p -type dopant, by which the double-donor doping of N 2 ( O ) can be avoided significantly. The fabricated p -type ZnO layers have a higher hole density and carrier mobility. The LEDs showed a very good rectification characteristic with a low threshold voltage of 4.0 V even at a temperature above 300 K . The LEDs can even emit intensive electroluminescence in the blue-violet region at the temperature of 350 K . The blue-violet emission was attributed to the donor-acceptor pair recombination at the p -type layer of the LED.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2435699