Leakage mechanisms in BiFeO3 thin films

The authors report results of transport studies on high quality, fully epitaxial BiFeO3 thin films grown via pulsed laser deposition on SrRuO3∕DyScO3 (110) substrates. Ferroelectric tests were conducted using symmetric and asymmetric device structures with either SrRuO3 or Pt top electrodes and SrRu...

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Bibliographic Details
Published in:Applied physics letters 2007-02, Vol.90 (7)
Main Authors: Pabst, Gary W., Martin, Lane W., Chu, Ying-Hao, Ramesh, R.
Format: Article
Language:English
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Summary:The authors report results of transport studies on high quality, fully epitaxial BiFeO3 thin films grown via pulsed laser deposition on SrRuO3∕DyScO3 (110) substrates. Ferroelectric tests were conducted using symmetric and asymmetric device structures with either SrRuO3 or Pt top electrodes and SrRuO3 bottom electrodes. Comparison between these structures demonstrates the influence of electrode selection on the dominant transport mechanism. Analysis of film electrical response suggests Poole-Frenkel emission as the limiting leakage current mechanism in the symmetric structure. Temperature dependent measurements yield trap ionization energies of ∼0.65–0.8eV. No clear dominant leakage mechanism was observed for the asymmetric structure.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2535663