Photovoltaic characteristics of amorphous silicon solar cells using boron doped tetrahedral amorphous carbon films as p -type window materials

Boron doped tetrahedral amorphous carbon (ta-C:B) was prepared by filtered cathodic vacuum arc deposition. A band gap of 2.0 eV and a conductivity of 1.42 × 10 − 7 S ∕ cm were obtained at the doping ratio of 2.13 at. % . A device structure was deduced from the conventional amorphous silicon ( a - Si...

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Bibliographic Details
Published in:Applied physics letters 2007-02, Vol.90 (8), p.083508-083508-3
Main Authors: Han, Jiecai, Tan, Manlin, Zhu, Jiaqi, Meng, Songhe, Wang, Binsheng, Mu, Shaojun, Cao, Dawei
Format: Article
Language:English
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Summary:Boron doped tetrahedral amorphous carbon (ta-C:B) was prepared by filtered cathodic vacuum arc deposition. A band gap of 2.0 eV and a conductivity of 1.42 × 10 − 7 S ∕ cm were obtained at the doping ratio of 2.13 at. % . A device structure was deduced from the conventional amorphous silicon ( a - Si : H ) solar cell using the ta-C:B window layer. Photovoltaic parameters of the cells were studied by varying the boron content in the ta-C:B films. A roughly 10% relative improvement of conversion efficiency was observed compared to the normal a - Si : H solar cell. The improved cell performance results from the enhancement of short wavelength response.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2539767