Characterization and optoelectronic properties of p-type N-doped CuAlO2 films

This letter reports a technique for increasing the carrier concentration and the conductivity of the p-type CuAlO2 through doping the material with nitrogen. The x-ray photoelectron spectroscopy and the optical band gap analyses suggested that the nitrogen atoms occupying the interstitial sites of t...

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Published in:Applied physics letters 2007-05, Vol.90 (19)
Main Authors: Yu, Ruei-Sung, Liang, Shih-Chang, Lu, Chih-Jung, Tasi, Du-Cheng, Shieu, Fuh-Sheng
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Language:English
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description This letter reports a technique for increasing the carrier concentration and the conductivity of the p-type CuAlO2 through doping the material with nitrogen. The x-ray photoelectron spectroscopy and the optical band gap analyses suggested that the nitrogen atoms occupying the interstitial sites of the delafossite structure provided the p-type CuAlO2 with an impurity energy level in the energy gap. It was also found that the N-doped CuAlO2 film had its optimum conduction properties when the dopant level reached 1.1at.%. Here, the carrier concentration was raised from 4.81×1016 in the undoped film to 2.13×1017cm−3 in the doped film, and the corresponding film’s conductivity was increased from 3.8×10−2to5.4×10−2(Ωcm)−1, as compared with the undoped CuAlO2 film.
doi_str_mv 10.1063/1.2679233
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title Characterization and optoelectronic properties of p-type N-doped CuAlO2 films
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