Conductance modulation by individual acceptors in Si nanoscale field-effect transistors

The authors measured low-temperature (6–28K) conductance in nanoscale p-channel field-effect transistors lightly doped with boron. They observed a conductance modulation, which they ascribed to the trapping/detrapping of single holes by/from individual acceptors. The statistics of the appearance of...

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Bibliographic Details
Published in:Applied physics letters 2007-03, Vol.90 (10)
Main Authors: Ono, Y., Nishiguchi, K., Fujiwara, A., Yamaguchi, H., Inokawa, H., Takahashi, Y.
Format: Article
Language:English
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Summary:The authors measured low-temperature (6–28K) conductance in nanoscale p-channel field-effect transistors lightly doped with boron. They observed a conductance modulation, which they ascribed to the trapping/detrapping of single holes by/from individual acceptors. The statistics of the appearance of the modulation in a few ten samples indicates that the number of acceptors is small, or even just one, suggesting that what the authors have observed is single-charge-transistor operation by a single-acceptor quantum dot.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2679254