Room temperature fast synthesis of zinc oxide nanowires by inductive heating

ZnO nanowires have been rapidly synthesized using inductive heating in a room temperature environment. Nanowires with random and aligned orientations were grown on silicon and 4H-SiC (0001) substrates in less than 5min, respectively, using ZnO/graphite as the solid source powder. Scanning electron m...

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Bibliographic Details
Published in:Applied physics letters 2007-02, Vol.90 (9)
Main Authors: Luo, Lei, Sosnowchik, Brian D., Lin, Liwei
Format: Article
Language:English
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Summary:ZnO nanowires have been rapidly synthesized using inductive heating in a room temperature environment. Nanowires with random and aligned orientations were grown on silicon and 4H-SiC (0001) substrates in less than 5min, respectively, using ZnO/graphite as the solid source powder. Scanning electron microscopy showed nanowire diameters of 20–120nm and lengths up to 5μm, and transmission electron microscopy verified the single-crystalline lattice of the nanowires. Electrical properties were studied by connecting a single ZnO nanowire in the field-effect transistor configuration. This demonstration further illustrates the feasibility of a simple and fast nanoscale synthesis using inductive heating for nanomaterial synthesis.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2709618